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bat 114-099 semiconductor group 327 thermal resistance (per diode) parameter symbol limit values unit junction to soldering point r thjs 780 k/w junction to ambient 1) r thja 1020 k/w 1) mounted on alumina 15 mm 16.7 mm to 0.7 mm electrical characteristics (per diode; t a = 25 c) parameter symbol limit values unit min. typ. max. breakdown voltage i r = 5 m a v br 4 -- v forward voltage i f = 1 ma i f = 10 ma v f - - 0.6 0.7 0.7 0.8 v forward voltage matching 1) i f = 10 ma d v f -- 10 mv diode capacitance v r = 0 v, f = 1 mhz c t - 0.25 0.5 pf forward resistance i f = 10 ma / 50 ma r f - 5.5 - w 1) d v f is difference between lowest and highest v f in component. bat 114-099 semiconductor group 328 forward current i f = f ( v f ) |
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